The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2000
Filed:
May. 07, 1999
Glenn S Solomon, Redwood City, CA (US);
David J Miller, Belmont, CA (US);
Tetsuzo Ueda, Menlo Park, CA (US);
CBL Technologies, Inc., Redwood City, CA (US);
Matsushita Electronics Corporation, Osaka, JP;
Abstract
A vapor-phase deposition system includes one or more channel units for promoting the downstream passage of reagent gases. A reactor of a vapor-phase deposition system may include one or more channels to promote passage of reagent gases beneath a susceptor stage. A susceptor, for arrangement within a reactor during epitaxial growth on a substrate, may include a truncated stage and a truncation side. The substrate may be aligned with a lower edge of the truncated stage, thereby avoiding chemical deposition on surfaces upstream of the substrate. One or more channels of the susceptor promote the downstream passage of reagent gases within the reactor. Methods for vapor-phase deposition and for promoting downstream passage of reagent gases within a reactor are also disclosed.