The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2000
Filed:
Dec. 12, 1997
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A film-forming method by a plasma CVD process, comprising introducing a raw material gas into a reaction chamber containing a substrate positioned therein through a plurality of gas ejecting holes provided at a gas feed pipe and introducing a discharging energy into said reaction chamber to excite and decompose said film-forming raw material gas introduced into said reaction chamber whereby causing the formation of a deposited film on said substrate, characterized in that the introduction of said film-forming raw material gas into said reaction chamber is conducted by ejecting the film-forming raw material gas toward a member opposed to the substrate from each of right and left sides of the gas feed pipe through the gas ejecting holes of the gas feed pipe at a gas-ejecting angle (a) of 45.degree..ltoreq.(a)<90.degree. to a line which is passing through between said cylindrical substrate and each of said plurality of gas feed pipes.