The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2000
Filed:
Aug. 27, 1998
Masato Kawata, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A nonvolatile semiconductor memory device includes a vertical memory cell. The memory cell is constituted by at least a channel portion, a drain and a source, first and second floating gates, and a control gate. The channel portion is vertically formed on a semiconductor substrate. The drain and the source are formed at upper and lower positions of the channel portion to form a channel in the channel portion. The first floating gate is formed on part of a side portion of the channel portion via a gate insulating film. The second floating gate is formed on the side portion of the channel portion in a region without the first floating gate. The control gate is formed outside the first and second floating gates via an insulating isolation film. A method of manufacturing the nonvolatile semiconductor memory device is also disclosed.