The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2000
Filed:
May. 26, 1998
Akihito Tanabe, Tokyo, JP;
NEC Corporation, , JP;
Abstract
There is provided a charge transfer device including (a) a charge transfer channel for transferring signal charges therethrough, (b) a floating diffusion region for accumulating therein charges transferred from the charge transfer channel, (c) a field effect transistor for resetting the floating diffusion region so that the floating diffusion region is at a predetermined potential and (d) a bias charge input section through which a bias charge is supplied and which is connected to either the charge transfer channel or the floating diffusion region. The field effect transistor includes a reset gate electrode and a reset drain. The charge transfer channel located below the reset gate electrode is designed to receive either a potential lower than a potential of the reset drain when the floating diffusion region is reset in the case that charges to be transferred are electrons, or a potential higher than a potential of the reset drain when the floating diffusion region is reset in the case that charges to be transferred are holes. The above-mentioned charge transfer device ensures to reset the floating diffusion region regardless of whether a potential in the reset drain is greater or smaller than a potential in a channel located below the reset gate electrode.