The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2000
Filed:
Aug. 28, 1998
Shinobu Fujita, Kanagawa-ken, JP;
Atsushi Kurobe, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A device structure provides improved efficiency of light emission from a light emitting element made of silicon while rendering such emission electrically controllable. Silicon in the light emitting element comprises fine microcrystals, which are miniaturized sufficiently to cause a quantum size effect. The microcrystals may be 10 nanometers (nm) or less in grain size. A dielectric film of 5 nm thick or less is formed containing therein such microcrystals. The microcrystal structure section is disposed between p- and n-type semiconductor layers. These layers are brought into electrical contact with the microcrystal structure only, while causing the remaining portions to be electrically insulative by a dielectric film or the like. Elementary particles of the opposite polarities, e.g. electrons and holes, are injected by tunnel effect into the microcrystals resulting in emission of light rays with increased efficiency.