The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2000
Filed:
Oct. 08, 1998
Applicant:
Inventor:
Shigeki Sawada, Kyoto, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438202 ; 438309 ; 438207 ; 438234 ; 438366 ;
Abstract
A method for producing a bipolar transistor and an MOS transistor of the present invention includes the steps of: forming a first insulation film in an MOS transistor region where the MOS transistor is to be formed and in a bipolar transistor region where the bipolar transistor is to be formed; forming a first conductive film and a second insulation film on the first insulation film; and removing the second insulation film, the first conductive film and the first insulation film from the bipolar transistor region.