The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2000
Filed:
Aug. 27, 1998
Juri Kato, Suwa, JP;
Kazuo Tanaka, Suwa, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
In a CMOS-element-containing semiconductor device, the CMOS element comprises: a silicon substrate; an n-channel MOS element formed on the silicon substrate and including an n-type source/drain region, a gate oxide film and a gate electrode; a p-channel MOS element formed on the silicon substrate and including a p-type source/drain region, a gate oxide film and a gate electrode; and a gate wiring layer electrically interconnecting the gate electrode of the n-channel MOS element and the gate electrode of the p-channel MOS element with one another. The gate electrodes and/or the gate wiring layer include at least in part a metal silicide layer. The gate electrodes and the gate wiring layer contain at arbitrary region impurities consisting of a III group dopant and/or a V group dopant in a concentration of at most 3.times.10.sup.20 atoms cm.sup.-3.