The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2000
Filed:
Jul. 20, 1999
Hong-sun Hwang, Kyungki-do, KR;
Abstract
Integrated circuit memory devices include a sense amplifier which is electrically coupled to a first pair of bit lines (BL and /BL) and is responsive to at least one amplifier enable signal (e.g., AE1, AE2). A preferred driver circuit is also provided. The driver circuit is responsive to a write enable pulse (.phi.WR) and drives the at least one amplifier enable signal to an inactive state (e.g., high impedance state) in response to a leading edge of the write enable pulse and to an active state (Vss or Vcc) in response to a trailing edge of the write enable pulse. The memory device also includes a write enable buffer that generates a write enable pulse in response to a write enable signal. By disposing the sense amplifier in an inactive state early in response to a leading edge of the write enable pulse, improved writing efficiency can be achieved.