The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2000

Filed:

Jan. 26, 1999
Applicant:
Inventors:

Hang.kan Sjodin, Knivsta, SE;

Anders Soderbarg, Uppsala, SE;

Nils Ogren, Vallingby, SE;

Ivar Hamberg, Stockholm, SE;

Dimitri Olofsson, Danderyd, SE;

Karin Andersson, Hasselby, SE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257558 ; 257559 ; 257557 ; 438321 ;
Abstract

A manufacturing method for semiconductor components is disclosed which will allow better precision in the definition of the doped areas of the components and the separation of differently doped areas. A selectively shaped area of, for example, polysilicon, defining the area or areas to be doped, is deposited on the component before the masks are applied. This makes the fitting of the masks less critical, as they only have to be fitted within the area of the polysilicon layer. In this way an accuracy of 0.1 .mu.m or better can be achieved.


Find Patent Forward Citations

Sjodin, Hang.kan. (2000). Bipolar transistor with polysilicon dummy emitter (U.S. Patent No. 6153919). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6153919

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…