The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2000

Filed:

Sep. 02, 1998
Applicant:
Inventors:

Hiroyuki Oguri, Kawasaki, JP;

Teruo Yokoyama, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257194 ; 257195 ;
Abstract

A laminated layer having a layer containing Al (In) and a layer not containing Al (In) alternately laminated one upon another is plasma etched by an etchant gas which can etch both the layers containing and not containing Al (In). An additive gas containing F is added to the etchant gas while a layer not containing Al (In) is etched. When the surface of the layer containing Al (In) is exposed, fluorides are formed on the surface of the layer containing Al (In) and the etching is automatically stopped. An emission peak specific to Al (In) is monitored to detect which layer is presently etched.


Find Patent Forward Citations

Oguri, Hiroyuki. (2000). Heterojunction compound semiconductor device and method of manufacturing (U.S. Patent No. 6153897). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6153897

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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