The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2000
Filed:
Aug. 26, 1999
Yutaka Ishibashi, Kawasaski, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
In a semiconductor device constituted using a borderless contact technique, for example, when a wiring layer with a damascene structure is connected to its underlying contact portion, a trench connect g with the contact portion is formed in the second interlayer insulation film. After that, the contact portion protruded from the bottom of the trench is selectively etched to flatten the bottom of the trench to remove a very small recess from that bottom of the trench which corresponds to a contact face between the contact portion and wiring layer. Thus, both a barrier metal layer and a metal layer for forming the wiring layer can be formed in the trench with higher reliability and accordingly the wiring layer and contact portion can be brought into reliable contact with each other. In a DRAM using a simple stacked capacitor, the storage electrode and plug portion can be put into reliable contact with each other.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile