The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2000
Filed:
Mar. 09, 1998
Francis J Kub, Arnold, MD (US);
Victor Temple, Clifton Park, NY (US);
Karl Hobart, Upper Marlboro, MD (US);
John Neilson, Norristown, PA (US);
Intersil Corporation, Palm Bay, FL (US);
Abstract
A method for making a semiconductor device from a plurality of semiconductor substrates includes the steps of: processing at least one surface of at least one of the substrates; thinning at least one of the substrates; bonding the processed and thinned substrates together so that the at least one processed surface defines an outer surface of the semiconductor device; and annealing the bonded together substrates at a relatively low anneal temperature so as to not adversely effect the at least one processed surface. The step of thinning preferably comprises removing a surface portion of the least one substrate opposite the processed surface, to a thickness of less than about 200 .mu.m. A gettering layer may be formed for the at least one substrate prior to thinning. Accordingly, the step of thinning removes the gettering layer. An implanted region may be formed at a surface of the at least one substrate opposite the processed surface prior to bonding. The implanting may comprise implanting with a lifetime killing implant or a dopant. An epitaxial layer may be formed on the backside of a substrate. The step of processing may include forming a metal layer. Thus, the anneal temperature is preferably less than a temperature related to a characteristic of the metal layer. For an aluminum layer, the anneal temperature is preferably less than about 450.degree. C. If a barrier metal is used between the aluminum and substrate, the anneal temperature may be in a range of about 450 to 550.degree. C.