The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2000
Filed:
Dec. 23, 1999
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A method of fabricating a semiconductor memory device comprises the steps of: (a) forming an interlayer insulating film on a semiconductor substrate, opening a contact hole in said interlayer insulating film, and burying a plug in said contact hole; (b) forming a first insulating film on said interlayer insulating film inclusive of said plug, and forming a trench in said first insulating film above said plug; (c) forming a first conductive film on said first insulating film inclusive of said trench, and etching back said first conductive film by a chemical mechanical polishing method to form a bottom electrode inside said trench; (d) forming a high dielectric film or a ferroelectric film and a second conductive film in this order on said first insulating film inclusive of said bottom electrode; and (e) patterning simultaneously said high dielectric film or ferroelectric film and said second conductive film to form a capacitor insulating film and a top electrode.