The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2000
Filed:
Nov. 12, 1998
Michael Kevin Ciraula, Round Rock, TX (US);
Christopher McCall Durham, Austin, TX (US);
Peter Juergen Klim, Austin, TX (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention addresses the foregoing needs by providing a circuit implemented in SOI (silicon on insulator) CMOS, which includes a first node precharged to an activated level, a first transistor coupled between the first node and the second node, a second transistor coupled between the second node and a ground potential, and a third transistor coupled to the second node and operable for preventing the second node from rising to the activated level. The third transistor prevents the parasitic bipolar effect from raising this second node to the activated level. Essentially, the third transistor maintains the second node substantially at a ground level.