The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2000
Filed:
Jan. 21, 1999
Jin-sung Kim, Kyungki-do, KR;
Young-gu Lee, Kyungki-do, KR;
Kyoung-man Shim, Kyungki-do, KR;
Kyue-sang Choi, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A method of manufacturing a cathode for a plasma etching apparatus includes steps for making the inside of holes formed in the cathode and the surface of the cathode a hard surface so as to prevent particle generation while the cathode is in use for etching a wafer. These steps include: a) forming a plurality of holes in a silicon substrate; b) carrying out a physical-surface treatment on the surface of the silicon substrate using slurry; and c) carrying out a chemical-surface treatment for removing protrusions inside the holes formed on the silicon substrate and on the surface of the silicon substrate using potassium hydroxide (KOH). The cathode manufactured by this method has a hard surface formed thereon and inside the holes, and the hard surface has no protrusions. Without protrusions, no particles can be generated from protrusions being etched and loosened during the etching process, so no particles adhere to the wafer being etched.