The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2000
Filed:
Apr. 22, 1998
Applicant:
Inventors:
Soichi Sugiura, Yokkaichi, JP;
Shigeki Sugimoto, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257301 ; 257313 ;
Abstract
A semiconductor integrated circuit device includes a p-silicon substrate, an n-buried layer formed in the substrate to divide the substrate into an upper region and a lower region, a trench formed from the surface of the substrate to the lower region of the substrate through the buried layer, and an electrode formed in the trench. The electrode forms an n-inversion layer using the buried layer as a carrier source, in the lower region of the semiconductor substrate by a field effect. The n-inversion layer constitutes a capacitor together with the electrode.