The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2000
Filed:
May. 06, 1998
Applicant:
Inventors:
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257296 ; 257369 ;
Abstract
A semiconductor device prevents latch up and enables subminiaturization of its structure, and a method can manufacture the semiconductor device. In the semiconductor device containing field-effect transistors of a complementary type, an interconnection containing semiconductor having n-type impurity connects a p-type impurity diffusion region forming an emitter electrode of a parasitically formed bipolar transistor to an n-type impurity diffusion region electrically connected to a power supply line. Thereby, a pn junction operating as a rectifier element is formed at a contact region between a connection portion and the p-type impurity diffusion region.