The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2000
Filed:
Feb. 11, 1999
Applicant:
Inventors:
Assignee:
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257202 ; 257210 ; 257211 ; 257224 ; 438 18 ; 438719 ; 438720 ; 438725 ;
Abstract
A method for avoiding micro-loading effect during etching is disclosed. The method comprises the steps of: providing a semiconductor substrate with a layer to be patterned and etched formed thereover; forming a masking layer over the layer to be patterned; defining a row pattern in the masking layer, the row pattern comprising a plurality of rectangles and a plurality of connecting bars, each of the connecting bars connecting two of the rectangles; and removing a portion of the layer to be patterned, to form a patterned layer with a recessed channel, by using the masking layer as a mask with the row pattern.