The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2000
Filed:
Feb. 18, 1999
Applicant:
Inventors:
So Tanaka, Itami, JP;
Akihiro Moto, Itami, JP;
Tatsuya Tanabe, Itami, JP;
Nobuyuki Ikoma, Itami, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257201 ; 438 47 ; 438 94 ; 117-2 ; 117-3 ;
Abstract
A semiconductor layer consisting of Ga.sub.1-x In.sub.x N.sub.y As.sub.1-y and/or GaN.sub.y As.sub.1-y and formed by incorporating nitrogen into a group III-V mixed crystal semiconductor is provided on a GaAs substrate. The hydrogen concentration in the semiconductor is kept at 5.times.10.sup.18 atoms/cm.sup.3 or below.