The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2000
Filed:
May. 26, 1998
Applicant:
Inventor:
Shinichi Horiba, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438384 ; 438382 ; 438238 ;
Abstract
A silicon nitride layer on a ground wire is used for an etching stopping layer so as to form a trench, after which a high-resistance load element is formed so as to extend the length of the resistance by the amount of the step of the trench, and by forming the high-resistance load element in two layers, the resistance length is made large.
Horiba, Shinichi. (2000). Method of manufacturing an sram with increased resistance length (U.S. Patent No. 6150228). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6150228
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile