The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2000
Filed:
Dec. 16, 1997
Applicant:
Inventor:
Seiichi Takahashi, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438357 ; 438358 ; 438369 ; 438370 ;
Abstract
A semiconductor device has a P type semiconductor substrate 1, a vertical type bipolar transistor having an N type base region 4, a lateral type bipolar transistor having an N type base region 4 formed on the semiconductor substrate 1, an N type collector region 7a, and an N type emitter region 8, and a P type insulating diffusion region 7b for isolating between vertical and lateral type bipolar transistors, at least one of collector and emitter regions of the lateral bipolar transistor having substantially same depth of the insulating diffusion region 7b.