The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2000
Filed:
May. 27, 1999
John J Stankus, Austin, TX (US);
Burt Wayne Fowler, Mountain City, TX (US);
Motorola Inc., Schumburg, IL (US);
Abstract
A method for forming a buried optical mirror in an integrated circuit (IC) begins by forming an opening (18) within a substrate (12). The opening (18) is then filled with a plurality of dielectric layers (20-26) that have different indexes of refraction whereby a Bragg reflector can be formed. A chemical mechanical polishing (CMP) process is then used to planarize the layers (20-26) such that these layers (20-26) only reside within the opening (18) whereby a mirror is formed. Lateral selective epitaxial growth, polysilicon deposition and recrystallization, or wafer bonding is then used to form a single crystalline or near single crystalline semiconductive material (32b) over a top of the substrate (12) and the reflecting mirror. Photodevice(s) are then formed over the mirror in the region (28) of material (32b) whereby reflecting mirror (20-26) will improve the quantum efficiency and speed of the photodevice(s).