The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2000
Filed:
Apr. 25, 1996
Tatsuhiro Yasaka, Kobe, JP;
Takashi Nishizawa, Kobe, JP;
Kazuo Muramatsu, Kobe, JP;
Tsutomu Watanabe, Kobe, JP;
Kabushiki Kaisha Kobe Seiko Sho, Kobe, JP;
Abstract
The present invention provides a test dummy wafer used in the process for manufacturing a semiconductor device, which has more excellent etching resistance than a silicon wafer, and excellent mirror surface properties and evenness required for a substrate, and which causes no contamination source in the manufacturing process. The dummy wafer is composed of glassy carbon, and at least one side thereof is preferably polished to a mirror surface having a surface roughness Ra of not more than 0.005 .mu.m. The dummy wafer of the present invention has excellent characteristics as a dummy wafer for monitoring the thickness of a CVD film. The dummy wafer having specific electric resistance of not more than 0.1 .OMEGA..multidot.cm exhibits excellent characteristics as a dummy wafer for monitoring the thickness of a film formed by sputtering and confirming cleanliness.