The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2000
Filed:
Jan. 25, 1999
Applicant:
Inventors:
Kenny King-tai Ngan, Fremont, CA (US);
Seshadri Ramaswami, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
20419217 ; 20429806 ;
Abstract
An ion deposition sputtering process for producing a titanium nitride film having a resistivity less than about 70 .mu..OMEGA.-cm is disclosed, which comprises the steps of: (1) adjusting a percentage of ionization of a gas phase mixture to a predetermined range by adjusting the power to an ionization source; and (2) adjusting a deposition rate of said film on a substrate to a predetermined range so that a combination of said percentage of ionization of said deposition mixture and said deposition rate produces said film.