The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2000
Filed:
Jan. 08, 1999
KDD Corporation, Tokyo, JP;
Abstract
The present invention provides a semiconductor memory capable of retaining information after removing a power supply and of storing information with an optical input. A memory cell is comprising an n-InP substrate, a first semiconductor (n-InGaAs) layer, a second semiconductor (i-InGaAs) layer, a third semiconductor (p-InGaAs) layer, a fourth semiconductor (i-InGaAs) layer and a fifth semiconductor (n-InGaAs) layer. The first to fifth semiconductor layers are stacked in this order on the n-InP substrate. A bias voltage is applied between the n-InP substrate and the fifth semiconductor layer to control a height of a TBD formed in the above multi-layer structure so that carriers may move and electrons can be stored in one of the second and fourth semiconductor layers.