The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2000
Filed:
Jun. 03, 1999
Bernhard H Andresen, Dallas, TX (US);
Roger A Cline, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An integrated circuit is provided with electrostatic discharge (ESD) protection circuitry (120) A substrate region in the semiconductor substrate is enclosed by a ring of highly doped region (350). An NMOS ESD protection transistor (N1) with its backgate in the enclosed substrate region can be voltage pumped by pump circuitry (N2) in order to trigger bipolar conduction of the ESD protection transistor at a lower voltage. Control circuitry (304) is connected to the signal bond pad and to the gate of amplifier circuitry (P1) to provide a voltage pulse in response to an ESD zap applied to the signal bond pad. PMOS amplifier circuitry (P1) provides an amplified voltage pulse to the pump circuitry with a magnitude approximately equal to the ESD potential on the signal pad so that a strong pump current is provided to the highly doped ring.