The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2000

Filed:

Aug. 10, 1998
Applicant:
Inventors:

Sunil N Shabde, Cupertino, CA (US);

Yowjuang William Liu, San Jose, CA (US);

Ting Yiu Tsui, Palo Alto, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R / ;
U.S. Cl.
CPC ...
324766 ; 324765 ; 324452 ;
Abstract

A method (100) and a system (150) for detecting defects in a dielectric material (112) includes the steps of moving carriers (102) in the dielectric material (112), wherein the number of carriers is a function of whether defects exist in the dielectric material (112). The carriers are then deflected (130) toward a surface (116) of the dielectric material (112) using, for example, a magnetic field (132), and form an accumulated charge profile on the surface (116) of the dielectric material (112). The charge profile is then detected (140) and used to determine (180) the location of defects within the dielectric material (112).


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