The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2000
Filed:
Jul. 13, 1999
Applicant:
Inventor:
Tadahiko Horiuchi, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257369 ; 257476 ; 257481 ; 257482 ; 365175 ; 365177 ;
Abstract
A semiconductor device of the present invention is a semiconductor device of a complementary MIS field effect transistor, wherein an anode of a first diode is connected to a silicon substrate of a first conduction type while a cathode of the first diode is connected to a first power supply while a cathode of a second diode is connected to a well of the other conduction type and an anode of the second diode is connected to a second power supply.