The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2000
Filed:
Aug. 02, 1999
Frank Fischer, Wurzburg, DE;
Thomas Litz, Wurzburg, DE;
Hans-Jurgen Lugauer, Gerbrunn, DE;
Markus Keim, Wurzburg, DE;
Thierry Baron, Gerbrunn, DE;
Gunter Reuscher, Wurzburg, DE;
Gottfried Landwehr, Wurzburg, DE;
Infineon Technologies AG, Munich, DE;
Abstract
An optoelectronic semiconductor component has a radiation-emitting active layer sequence which is associated with at least one poorly dopable semiconductor layer of a first conductivity type. A heavily doped first degenerated junction layer of a first conductivity type and a heavily doped second degenerated junction layer of a second conductivity type opposite to the first conductivity type are provided between the poorly dopable semiconductor layer and a contact layer of the semiconductor body, the contact layer being associated with the poorly dopable semiconductor layer.