The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2000
Filed:
Oct. 23, 1998
Hitoshi Tauchi, Aichi-ken, JP;
Satoru Hori, Aichi-ken, JP;
Joji Hachisuka, Aichi-ken, JP;
Makoto Yamazaki, Aichi-ken, JP;
Masayoshi Ando, Aichi-ken, JP;
Aisin Seiki Kabushiki Kaisha, Kariya, JP;
Abstract
A process for producing a sintered thermoelectric semiconductor includes a first step of forming bulk crystals of a thermoelectric semiconductor and a second step of hot extrusion. The second step includes substeps of placing the bulk crystals in the cavity of a heated extrusion die, pushing the ram into the cavity, thereby compressing and crushing the bulk crystals and turning them into a molten or semi-molten state, and finally extruding the molten or semi-molten crystals, thereby sintering them and forming a sintered thermoelectric semiconductor.