The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2000
Filed:
Jul. 10, 1998
Stephen Carl Kuehne, Orlando, FL (US);
Alvaro Maury, Orlando, FL (US);
Lucent Technologies Inc., Murray Hill, NJ (US);
Abstract
The specification describes a dual patterned polish stop layer technique for shallow trench isolation. The shallow trenches are formed by etching trenches in a semiconductor substrate wafer, backfilling with oxide, and polishing by chemical-mechanical polishing (CMP) to produce a planar, trench isolated, wafer. To ensure planarity of the wafer after CMP, and avoid dishing of the field oxide, a dual silicon nitride polish stop layer is used. The first polish stop layer is applied selectively to protect the active device regions, and the second polish stop layer is applied selectively to protect the field oxide regions.