The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2000
Filed:
Oct. 01, 1998
Advanced Micro Devices, Sunnyvale, CA (US);
Abstract
A semiconductor device and manufacturing method is provided in which asymmetric source/drain regions are formed using a self aligning implant mask. A gate electrode is formed on a substrate and a dielectric layer is formed over the substrate and adjacent the gate electrode. A masking layer is formed over the dielectric layer and the gate electrode and selectively removed to form an implant mask. The implant mask extends further over a first side of the gate electrode than a second side of the gate electrode. Using the implant mask for alignment, a dopant is implanted into the active regions of the substrate adjacent the gate electrode to form a first heavily-doped region adjacent the first side of the gate electrode and second heavily-doped region adjacent the second side of the gate electrode. The first heavily-doped region is spaced further from the gate electrode than the second heavily-doped region. Contacts may be formed to the masking layer or a silicide layer formed from the masking layer.