The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2000
Filed:
Jun. 25, 1998
Shye-Lin Wu, Hsinchu, TW;
Acer Semiconductor Manufacturing Inc., Hsinchu, TW;
Abstract
A method for forming mask read-only memories comprises: A gate oxide layer is formed on a semiconductor substrate. A polysilicon layer is formed on the gate oxide layer. Then, a silicon nitride layer is formed on said polysilicon layer. The gate structures are defined by patterning the silicon nitride layer and the polysilicon layer. Subsequently, the silicon oxide spacers are formed on the sidewalls of the gate structures. An ion implantation is performed to form the buried bit lines in said semiconductor substrate between said gate structures. A BPSG layer is formed on said semiconductor substrate. Then, the BPSG layer is polished until the top surface of said gate structures and the silicon nitride layer is removed. A conductive layer is formed along the surfaces of said residual BPSG layer, silicon oxide spacers and polysilicon layer.