The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2000
Filed:
Nov. 15, 1999
Applicant:
Inventors:
Mitsuji Nunokawa, Nakakoma-gun, JP;
Yutaka Sato, Nakakoma-gun, JP;
Assignee:
Fujitsu Quantum Devices Limited, Yamanashi, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438172 ; 438172 ; 438174 ; 438176 ; 257194 ;
Abstract
A semiconductor device includes an ohmic electrode and a Schottky electrode respectively carrying interconnection patterns with intervening adhesion layer and a diffusion barrier layer, wherein the Schottky electrode further includes a metal layer that prevents a reaction between the Schottky electrode and the diffusion barrier layer such that the metal layer is interposed between the top surface of the Schottky electrode and adhesion layer for increasing the distance between the diffusion barrier layer and the Schottky electrode.