The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2000
Filed:
Sep. 02, 1998
Applicant:
Inventors:
Jiahua Huang, San Jose, CA (US);
Yuesong He, San Jose, CA (US);
Kent Kuohua Chang, Cupertino, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430 30 ; 430313 ; 356346 ;
Abstract
Tunnel oxide degradation is reduced by reducing residual photoresist material in open areas of a mask pattern. Embodiments include detecting residual photoresist in an exposed underlying region of a substrate by x-ray spectroscopy and descumming in response to detected residual photoresist.