The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2000
Filed:
Jun. 05, 1998
Applicant:
Inventors:
Stanley F Marszalek, Cranford, NJ (US);
Katherine Theresa Nelson, Gillette, NJ (US);
Kenneth Lee Walker, New Providence, NJ (US);
Kim Willard Womack, Duluth, GA (US);
Man Fei Yan, Berkeley Heights, NJ (US);
Assignee:
Lucent Technologies Inc., Murray Hill, NJ (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
65414 ; 65417 ; 65423 ; 65430 ; 4271632 ; 427166 ; 42725535 ; 42725537 ; 42725539 ;
Abstract
The deposition rate of MCVD processes is enhanced by applying at least a first and a second independently controlled heat source to a plurality of reactants which are used to form deposited particulate matter. The first heat source is adjusted so as to provide at least a specified rate of reaction for the reactants, and the second source is adjusted so as to provide at least a specified deposition rate for the particulate matter.