The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2000
Filed:
Aug. 24, 1999
Takashi Ide, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
An apparatus for measuring crystal strain in a microscopic region within a semiconductor crystal. The apparatus comprises: a He--Ne laser 1 for irradiating a laser light perpendicularly to the recording surface of a negative film 2 on which a transmission electron microscope image of a semiconductor crystal as a sample is recorded; a translucent screen 3 on which a diffraction image is projected, said diffraction image being produced by transmitting the laser light through said transmission electron microscope image recorded on said negative film 2; a CCD camera 4 for taking said diffraction image projected; and a computer for measurement and control 5 for scanning irradiation positions of said laser light, for taking in picked up image data from said CCD camera 4 in synchronization with said scanning, for measuring positions or intensities of diffraction spots based on said picked up image data, and for mapping a relation of diffraction spot positions or diffraction spot intensities for each irradiation position.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile