The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2000

Filed:

Aug. 23, 1999
Applicant:
Inventor:

Cheng P Wen, Mission Viejo, CA (US);

Assignee:

Raytheon Company, Lexington, MA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03B / ; H03B / ;
U.S. Cl.
CPC ...
331 96 ; 3311 / ; 333230 ;
Abstract

A millimeter-wave/microwave oscillator circuit and method of fabricating same are disclosed. A high Q-factor resonator is formed by disposing a transferred electron negative resistance device, such as a Gunn diode, or an IMPATT negative resistance device in a semi-circular cross-sectional shaped resonator cavity. The equivalent capacitance of the negative resistance diode can be designed to resonate with the equivalent series inductance for the resonator cavity by adjusting the dimensions of the cavity and the placement of the negative resistance device therein. Very low cost, compact and lightweight microwave and millimeter-wave integrated circuit power sources using negative resistance diodes can be batch manufactured.


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