The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2000
Filed:
Nov. 19, 1998
Applicant:
Inventor:
Kazumi Sugai, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438783 ; 438778 ; 438787 ; 438766 ; 438627 ; 438637 ; 438643 ; 438653 ; 438672 ;
Abstract
A semiconductor device manufacturing method comprises the steps of depositing a first insulation coating on a substrate, forming a wiring groove on the first insulation coating, depositing aluminum or its alloy on the wiring groove, eliminating the aluminum or its alloy deposited over the other portion than the wiring groove, depositing a second insulation coating doped with at least B or P on the substrate, depositing a third insulation coating on the second insulation coating, applying a photoresist on the third insulation coating, and exposing the photoresist to a light of short wavelength.