The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2000
Filed:
Apr. 20, 1998
Fahd Hinedi, Austin, TX (US);
Lakshmikant Mamileti, Cedar Park, TX (US);
International Business Machines Corporation, Armonk, NY (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
Series-connected stacked PFETS are employed in an off-chip driver output stage. When the output driver is enabled, the gate of the PFET transistor directly connected to the output is biased by a latch at a voltage level of either one threshold voltage above ground or one threshold voltage below the power supply, depending on the data signal. This provides overvoltage protection even for overshoots and undershoots of one threshold voltage or less, and provides overvoltage protection below the threshold voltages required to activate conventional overvoltage protection devices. Tight tolerances for maximum gate voltages may thus be achieved, and smaller devices having thinner gate oxides utilized in the off-chip drivers of a processor or other device.