The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2000
Filed:
Aug. 03, 1999
Soichi Sugiura, Mie-ken, JP;
Hisashi Watanobe, Mie-ken, JP;
Kabushiki Kaisha Toshiba, Kanagawa-Ken, JP;
Abstract
A semiconductor device provided with a thin film of 0.1 nm to 2 nm in thickness, having a crystal structure different from that of a conductor and a semiconductor region, between the conductor and the semiconductor region. When the semiconductor region is made of single crystal silicon and the conductor region is made of amorphous silicon or poly silicon, the oxygen surface concentration of the thin film is equal to or higher than 1.times.10.sup.15 cm.sup.-2 and equal to or lower than 4.times.10.sup.15 cm.sup.-2 in one case, that of oxygen is equal to or higher than 1.times.10.sup.15 cm.sup.-2 and equal to or lower than 2.times.10.sup.15 cm.sup.-2 and that of nitrogen is equal to or higher than 1.times.10.sup.15 cm.sup.-2 and equal to or lower than 4.times.10.sup.15 cm.sup.-2 in the other case. The presence of the thin film prevents the epitaxial growth from starting from the interface between the conductor and the semiconductor region and reduces the crystal defect formation and growth near the interface.