The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2000

Filed:

Aug. 20, 1998
Applicant:
Inventors:

Hiroaki Hamanaka, Hiratsuka, JP;

Norihiro Sakamoto, Hiratsuka, JP;

Fumiyuki Suda, Yokohama, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02B / ; G03G / ; H04N / ;
U.S. Cl.
CPC ...
2502 / ; 250216 ; 257431 ;
Abstract

A first object of the present invention is to provide a photosensor for use in an apparatus such as a copying machine, a printer etc. employing an electrophotographic technology which can prevent an image anomaly such as a blurring from generation even if it is exposed to a high-humidity ambient for a long period and subjected to multiple repetitions of numerous printing characters. A second object of the invention is to provide a photosensor for use in electrophotography which is excellent in surface abrasion durability, humidity resistivity etc. To satisfy the first purpose mentioned above, a photoconductive layer 2 formed of an amorphous layer including silicon atoms as a major element is deposited on a conductive substrate 1 formed of aluminium etc. A surface protective film 4 formed of another amorphous film including the silicon atoms as the main element, for instance, an a-SiC or an a-SiNC film is stacked on the layer 2 by adjusting a contact angle of the film 4 with de-ionized water measured in an open air ambient so as to be larger than about 76.degree.. To satisfy the second purpose mentioned above, another photosensitive layer 13 is grown via an adhesion enhancement layer 12 onto another conductive substrate 11, on an outside of which another surface protective film 16 including nitrogen and carbon atoms as well as the silicon atoms also as the major element is deposited.


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