The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2000
Filed:
Mar. 08, 1996
Applicant:
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C03C / ; B44C / ;
U.S. Cl.
CPC ...
438743 ; 438694 ; 438703 ; 438906 ;
Abstract
A semiconductor device manufacturing method includes the step of forming a silicon oxide film on the surface of a silicon region, and the step of supplying anhydrous hydrofluoric acid gas to the silicon oxide film, thereby removing the silicon oxide film. The total concentration of Si--H bonds, Si--O--H bonds, and H.sub.2 O molecules, in the silicon oxide film is 1.times.10.sup.13 /cm.sup.2 or more.