The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2000

Filed:

Oct. 20, 1998
Applicant:
Inventors:

Jeong-Seok Kim, Kyunggi-do, KR;

Joo-Wook Park, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438629 ; 438627 ; 438628 ; 438639 ; 438648 ;
Abstract

A thin conductive layer is formed on a contact hole bottom and on a contact hole sidewall in an insulating layer on an integrated circuit substrate, and then both chemical vapor deposition and physical vapor deposition are performed, to form a glue layer on the thin conductive layer. By performing both chemical vapor deposition and physical vapor deposition, the desirable characteristics of both processes may be obtained and the drawbacks in each of these processes may be compensated. Preferably, chemical vapor deposition of a material is performed, and physical vapor deposition of the same material is performed, to form the glue layer on the thin conductive layer. More particularly, chemical vapor deposition of titanium nitride, and physical vapor deposition of titanium nitride may be performed to form the glue layer on the thin conductive layer. As an alternative to titanium nitride, tungsten nitride may be used. After forming the glue layer, the contact hole may be filled with conductive material such as tungsten.


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