The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2000
Filed:
Apr. 23, 1997
Applicant:
Inventor:
Dean Jennings, San Ramon, CA (US);
Assignee:
Elantec, Inc., Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438406 ; 438459 ; 438479 ; 438517 ; 438977 ; 438154 ; 438311 ;
Abstract
A method of forming a semiconductor substrate, comprising the steps of: providing a device substrate of a first conductivity type having a first surface and a second surface, and a handle substrate; depositing a dopant in the first surface of the wafer; diffusing the dopant through the wafer from the first surface toward the second surface, thereby forming a well; bonding the first surface of the device wafer to the handle substrate; and thinning the device substrate to yield a final device layer with a retrograde well. The dopant may be of the first or a second conductivity type.