The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2000
Filed:
Nov. 08, 1999
Ji-Hum Baik, Yongin, KR;
Chang-Il Oh, Seongnam, KR;
Sang-Dai Lee, Hwasung-kun, KR;
Won-Lae Kim, Seoul, KR;
Chong-Soon Yoo, Seoul, KR;
Dongjin Semichem Co., Ltd., Incheon, KR;
Abstract
A photoresist remover composition used for removing photoresist during the manufacture of semiconductor devices such as integrated circuits (IC), large-scale integrated circuits (LSI) or very large scale integrated circuits (VLSI). The photoresist remover composition includes 10.about.40 wt % of water-soluble amine compound; 20.about.50 wt % of at least one water-soluble polar organic solvent selected from the group consisting of dimetylsulfoxide (DMSO), N-methylpyrrolidone (NMP), dimethylacetamide (DMAc), dimethylformamide (DMF) and dimethylimidezolidinone (DMI); 10.about.30 wt % of water; 0.1.about.10 wt % of organic phenol compound containing two or more hydroxy groups; 0.1.about.10 wt % of triazole compound; and 0.01.about.1 wt % of silicone surfactant. Therefore, the photoresist remover composition can easily remove, at a low temperature and in a short time, a photoresist layer which has been cured during hard baking, dry etching, ashing and/or ion-implantation processes, and the potoresist layer cross-linked by a metallic contaminants shed from a lower metal layer during these processes. Also, corrosion of the lower metal pattern during the photoresist removal process can be minimized.