The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2000
Filed:
Nov. 30, 1998
Kevin David Cummings, Phoenix, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A lithographic mask (FIG. 9 or FIG. 10) that is primarily used for SCALPEL processing has a substrate (100). Layers (102, 104, 106, 108, 110, and 112) are formed and selectively patterned and etched to form E-beam exposure windows (118) and skirt regions (120) framing the windows (118). The skirt regions (120) and some portions of the patterned features (124) within the window (118) are formed having thicker/thinner regions of material or formed of different material whereby different regions of the mask (FIG. 9) scatter energy to differing degrees. The different scattering regions on the mask allow SCALPEL patterns to be formed on the wafer with improved critical dimension (CD) control, reduced aberrant feature formation, and improved yield.