The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2000
Filed:
Oct. 19, 1999
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
Over an active region with two bent portions on a semiconductor substrate, first and second word lines extend to cross these bent portions and to be vertically spaced apart from each other. Around at the center of the active region, a capacitor for storing data thereon and a capacitor contact are formed. A first bit line contact, which is connected to the active region, is formed on the opposite side to the capacitor contact across the first word line over the active region. A second bit line contact, which is also connected to the active region, is formed on the opposite side to the capacitor contact across the second word line over the active region. These first and second bit line contacts are provided substantially symmetrically about the center of the memory cell. In a pair of memory cells adjacent to each other along bit lines, one vertical end of the active region in one of the memory cells is continuous with an associated vertical end of the active region in the other memory cell. And each of the first and second bit line contacts is shared between an adjacent pair of memory cells.