The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2000
Filed:
Nov. 22, 1994
Hugh P McAdams, McKinney, TX (US);
Ching-Yuh Tsay, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An integrated circuit substrate bias pumping arrangement includes a charge pump circuit arranged as a circuit path from an oscillator input to a substrate. The charge pump circuit operates to supply charge to the substrate in response to a level of the oscillator signal. In the charge pump circuit, a pumping transistor transfers stored charge from a pumping capacitor to the substrate without imparting all of a threshold voltage of the pumping transistor as a voltage loss. The pumping transistor has its conduction path connected in a series circuit between the pumping capacitor and the substrate. A control gate electrode of the pumping transistor is bootstrapped to turn on the pumping transistor by a delayed version of the input signal used for pumping stored charge from the pumping capacitor to the substrate. Two of the charge pump circuits can be operated in a push-pull configuration, substrate bias pump.