The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2000
Filed:
Sep. 05, 1997
Applicant:
Inventor:
David Wu, San Jose, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257336 ; 257344 ;
Abstract
A CMOS semiconductor device is formed having an N-channel transistor comprising a source/drain region and an N-LDD region with a graded junction. The graded N-LDD junction is obtained by implanting a high diffusivity N-type impurity, such as P, after the N-LDD implant, e.g., As, subsequent to sidewall spacer formation. Upon activation annealing to form the N-channel transistor source/drain regions, P diffuses to a greater depth than As, thereby forming a deeper and graded N-LDD junction.